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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors
Product specification Supersedes data of 1998 Oct 02 2000 Oct 30
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV). DESCRIPTION NPN silicon planar epitaxial transistors in 4-pin dual-emitter SOT343N and SOT343R plastic packages. PIN DESCRIPTION MARKING TYPE NUMBER BFG505W BFG505W/X BFG505W/XR PINNING CODE N0 N1 P0
BFG505W; BFG505W/X; BFG505W/XR
page
4
3
1 Top view
2
MBK523
BFG505W (see Fig.1) 1 2 3 4 collector base emitter emitter Fig.1 SOT343N.
BFG505W/X (see Fig.1) 1 2 3 4 collector emitter base emitter
2 Top view 1
MSB842
alfpage
3
4
BFG505W/XR (see Fig.2) 1 2 3 4 QUICK REFERENCE DATA SYMBOL VCBO VCES IC Ptot hFE Cre fT GUM |s21|2 F PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain noise figure Ts 85 C IC = 5 mA; VCE = 6 V IC = 0; VCB = 6 V; f = 1 MHz IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz 15 - open emitter collector-emitter voltage RBE = 0 CONDITIONS collector emitter base emitter
Fig.2 SOT343R.
MIN. - - - - 60 - - -
TYP. MAX. UNIT - - - - 120 0.2 9 19 12 16 1.9 20 15 18 500 250 - - - - - - pF GHz dB dB dB dB V V mA mW
2000 Oct 30
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 85 C; see Fig.3; note 1 RBE = 0 open collector CONDITIONS open emitter
BFG505W; BFG505W/X; BFG505W/XR
MIN. - - - - - -65 -
MAX. 20 15 2.5 18 500 +150 175 V V V
UNIT
mA mW C C
CONDITIONS Ts 85 C; note 1
VALUE 180
UNIT K/W
handbook, halfpage
600
MBG248
P tot (mW) 400
200
0 0 50 100 150 T s ( C)
o
200
Fig.3 Power derating curve.
2000 Oct 30
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO hFE fT Cc Ce Cre GUM PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain; note 1 CONDITIONS IC = 2.5 A ; IE = 0 IE = 2.5 A; IC = 0 VCB = 6 V; IE = 0
BFG505W; BFG505W/X; BFG505W/XR
MIN. 20 15 2.5 - 60 - - - - - - 15 - - - - -
TYP. - - - - 120 9 0.3 0.4 0.2 19 12 16 1.2 1.6 1.9 4 10
MAX. UNIT - - - 50 250 - - - - - - - 1.7 2.1 - - - GHz pF pF pF dB dB dB dB dB dB dBm dBm V V V nA
collector-emitter breakdown voltage IC = 10 A; RBE = 0
IC = 5 mA; VCE = 6 V see Fig.4 IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C; see Fig.6 IE = ie = 0; VCB = 6 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCB = 6 V; f = 1 MHz; see Fig.5 IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C
|s21|2 F
insertion power gain noise figure
IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C s = opt; IC = 1.25 mA; VCE = 6 V; f = 900 MHz s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz s = opt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz
PL1 ITO Notes
output power at 1 dB gain compression third order intercept point
IC = 5 mA; VCE = 6 V; f = 900 MHz; RL = 50 ; Tamb = 25 C note 2
s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------- dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) 2. IC = 5 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at 2fp - fq = 898 MHz and 2fq - fp = 904 MHz.
2000 Oct 30
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X; BFG505W/XR
handbook, halfpage
250
MRA639
handbook, halfpage
0.4
MLC032
hFE 200
C re (pF) 0.3
150 0.2 100 0.1 50
0 10-3
10-2
10-1
1
10
102 IC (mA)
0 0 2 4 6 8 10 VCB (V)
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector current; typical values.
Fig.5
Feedback capacitance as a function of collector-base voltage; typical values.
MLC033
handbook, halfpage
12
fT (GHz) 8
VCE = 6 V VCE = 3 V
4
0 10 1
1
10
2 I C (mA) 10
f = 1 GHz; Tamb = 25 C.
Fig.6
Transition frequency as a function of collector current; typical values.
2000 Oct 30
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X; BFG505W/XR
handbook, halfpage
30
MLC034
handbook, halfpage
30
MLC035
gain (dB) 20 MSG G UM
gain (dB) 20
MSG 10 10
G max G UM
0
0
4
8
10
I C (mA)
12
0
0
4
8
10
I C (mA)
12
f = 900 MHz; VCE = 6 V.
f = 2 GHz; VCE = 6 V.
Fig.7
Gain as a function of collector current; typical values.
Fig.8
Gain as a function of collector current; typical values.
handbook, halfpage
50
MLC036
gain (dB)
handbook, halfpage
50
MLC037
G UM 40
gain (dB)
G UM 40 MSG
30 MSG
30
20
20
10
10
G max
0 10 10
2
0 10
3
f (MHz)
10
4
10
10
2
10
3
f (MHz)
10
4
IC = 1.25 mA; VCE = 6 V.
IC = 5 mA; VCE = 6 V.
Fig.9
Gain as a function of frequency; typical values.
Fig.10 Gain as a function of frequency; typical values.
2000 Oct 30
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X; BFG505W/XR
handbook, halfpage
4
MLC038
handbook, halfpage
5
MRA650
F (dB) 3
Fmin (dB) 4
f = 900 MHz
20 Gass (dB) 15
1000 MHz Gass 2000 MHz
3 2 f = 2000 MHz 2 1000 MHz 900 MHz 500 MHz 1 2000 MHz 1000 MHz 900 MHz 500 MHz
10
5 Fmin 0
1
0 10 1
1
I C (mA)
10
0 10-1
1
IC (mA)
-5 10
VCE = 6 V.
VCE = 6 V.
Fig.11 Minimum noise figure as a function of collector current; typical values.
Fig.12 Associated available gain as a function of collector current; typical values.
handbook, halfpage
4
MLC039
I handbook, halfpage C = 1.25 mA Fmin (dB) 4
5
MRA651
5 mA Gass
F (dB) 3
20 Gass (dB) 15
3 2 I C = 5 mA 1 1.25 mA 1 1.25 mA 0 102 2 5 mA
10
5
Fmin
0
0 10 2
10 3
f (MHz)
10 4
103
f (MHz)
-5 104
VCE = 6 V.
VCE = 6 V.
Fig.13 Minimum noise figure as a function of frequency; typical values.
Fig.14 Associated available gain as a function of frequency; typical values.
2000 Oct 30
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X; BFG505W/XR
handbook, full pagewidth
pot. unst. region
90 1.0 1 45 0.8 0.6
135
0.5
2
stability circle 0.2 Fmin = 1. 2 dB 0.2 0.5 1 OPT F = 1.5 dB 5 2 F = 2 dB F = 3 dB 5
0.4 0.2 0 0
180
0
0.2
5
-135
0.5 1
2
-45
MRA652
1.0
-90 f = 900 MHz; VCE = 6 V; IC = 1.25 mA; Zo = 50 .
Fig.15 Common emitter noise figure circles; typical values.
handbook, full pagewidth
pot. unst. region
90 1.0 1 45 0.8 0.6 OPT 0.4 0.2
135
0.5
2
0.2 stability circle 180 0 0.2 0.5
Fmin = 1. 9 dB F = 2.5 dB 1 2 F = 3 dB F = 4 dB
5
5
0
0
0.2
5
-135
0.5 1
2
-45
MRA653
1.0
-90 f = 2 GHz; VCE = 6 V; IC = 1.25 mA; Zo = 50 .
Fig.16 Common emitter noise figure circles; typical values.
2000 Oct 30
8
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X; BFG505W/XR
handbook, full pagewidth
90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 3 GHz 1 2 5 40 MHz 0o 0
0.2
5
0.2
5
0.5 135 o 1
2
45 o
MLC040
1.0
90 o VCE = 6 V; IC = 5 mA; Zo = 50 .
Fig.17 Common emitter input reflection coefficient (s11); typical values.
handbook, full pagewidth
90 o
135 o
45 o
180
o
40 MHz 15 12 9 6 3
3 GHz 0
o
135 o
45 o
90 o VCE = 6 V; IC = 5 mA.
MLC041
Fig.18 Common emitter forward transmission coefficient (s21); typical values.
2000 Oct 30
9
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X; BFG505W/XR
handbook, full pagewidth
90 o
135 o
3 GHz
45 o
180 o 0.25
40 MHz 0.20 0.15 0.10 0.05
0o
135 o
45 o
90 o VCE = 6 ; IC = 5 mA.
MLC042
Fig.19 Common emitter reverse transmission coefficient (s12); typical values.
handbook, full pagewidth
90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 40 MHz 0o 0
0.2
5
0.2 3 GHz
5
0.5 135 o 1
2
45 o
MLC043
1.0
90 o VCE = 6 V; IC = 5 mA; Zo = 50 .
Fig.20 Common emitter output reflection coefficient (s22); typical values.
2000 Oct 30
10
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
SPICE parameters for the BFG505W die SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 (1) 20 22 23 24 25 26 27 28 29 30 31 32 33 34 35
(1) (1)
BFG505W; BFG505W/X; BFG505W/XR
PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS
VALUE 134.1 180.0 0.988 38.34 150.0 27.81 2.051 55.19 0.982 2.459 2.920 17.45 1.062 20.00 1.000 20.00 1.171 4.350 0.000 1.110 3.000 284.7 600.0 0.303 7.037 12.34 1.701 30.64 0.000 242.4 188.6 0.041 0.130 1.332 0.000 - - V
UNIT aA
SEQUENCE No. 36 38 Note
(1)
PARAMETER VJS MJS FC
VALUE 750.0 0.000 0.897 - -
UNIT mV
37 (1)
mA fA - - - V mA aA - A - eV - fF mV - ps - V mA deg fF mV - - ns F
1. These parameters have not been extracted, the default values are shown.
handbook, halfpage
C cb
L1 B
LB B' E' LE C'
L2 C
C be
Cce
MBC964
L3
E QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc) fc = scaling frequency = 1 GHz.
21 (1)
Fig.21 Package equivalent circuit SOT343N; SOT343R.
List of components (see Fig.21) DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 70 50 115 0.34 0.10 0.25 0.40 0.40 VALUE fF fF fF nH nH nH nH nH UNIT
2000 Oct 30
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
PACKAGE OUTLINES Plastic surface mounted package; 4 leads
BFG505W; BFG505W/X; BFG505W/XR
SOT343N
D
B
E
A
X
y
HE e
vMA
4
3
Q
A A1 c
1
b1 e1 bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343N
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
2000 Oct 30
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG505W; BFG505W/X; BFG505W/XR
Plastic surface mounted package; reverse pinning; 4 leads
SOT343R
D
B
E
A
X
y
HE e
vMA
3
4
Q
A A1 c
2
wM B bp e1 b1
1
Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343R
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21
2000 Oct 30
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development
BFG505W; BFG505W/X; BFG505W/XR
DEFINITIONS (1) This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2000 Oct 30
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
NOTES
BFG505W; BFG505W/X; BFG505W/XR
2000 Oct 30
15
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For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 70
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/04/pp16
Date of release: 2000
Oct 30
Document order number:
9397 750 07541

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